A potential difference of \(2V\) is applied between the opposite faces of a Ge crystal plate of area \(1\,cm^2\) and thickness \(0.5\,mm\). If the concentration of electrons in Ge is \(2\times 10^{19}\,m^{-3}\) and mobilities of electrons and holes are \(0.36\,m^2V^{-1}s^{-1}\) and \(0.14\,m^2V^{-1}s^{-1}\), then the current flowing through the plate will be