Step 1: Understanding the behavior of depletion region.
The width of the depletion layer in a p-n junction diode depends on the biasing conditions.
- In forward bias, the width of the depletion region decreases because the external voltage reduces the barrier for charge carriers to cross the junction.
- In reverse bias, the width of the depletion region increases as the applied voltage enhances the barrier, making it harder for charge carriers to cross.
Step 2: Conclusion.
Thus, the width of the depletion layer decreases under forward bias and increases under reverse bias. Therefore, the correct answer is (D) decreases and increases.