Step 1: Understand the function of gate voltage and threshold voltage.
The threshold voltage (\(V_{th}\)) is the minimum gate-to-source voltage required to create a conducting channel (inversion layer) of electrons in an n-channel MOSFET. Applying a positive gate voltage attracts electrons to the silicon surface under the oxide.
Step 2: Analyze the effect of fixed positive charges in the oxide.
Fixed positive charges (\(Q_f\)) within the gate oxide will create their own electric field. This field will also attract negative charges (electrons) to the silicon surface, just as a positive gate voltage would.
Step 3: Conclude the impact on threshold voltage.
Since the fixed positive charges are already helping to attract the electrons needed to form the channel, less external positive voltage needs to be applied to the gate to reach the point of inversion. Therefore, the required threshold voltage is reduced.