In a p-n junction diode, when a reverse voltage is applied, very few charge carriers (electrons and holes) are available to conduct current. As a result, the reverse current is extremely small and is often referred to as the leakage current.
The reverse current is practically independent of the applied reverse voltage, except when the reverse voltage exceeds the breakdown voltage of the diode, at which point the reverse current increases dramatically (due to avalanche or Zener breakdown).
For most practical purposes, the reverse current remains almost constant and very small, even with increasing reverse voltage, as long as the applied voltage does not exceed the breakdown voltage.
Match List - I with List - II:
List - I:
(A) Electric field inside (distance \( r > 0 \) from center) of a uniformly charged spherical shell with surface charge density \( \sigma \), and radius \( R \).
(B) Electric field at distance \( r > 0 \) from a uniformly charged infinite plane sheet with surface charge density \( \sigma \).
(C) Electric field outside (distance \( r > 0 \) from center) of a uniformly charged spherical shell with surface charge density \( \sigma \), and radius \( R \).
(D) Electric field between two oppositely charged infinite plane parallel sheets with uniform surface charge density \( \sigma \).
List - II:
(I) \( \frac{\sigma}{\epsilon_0} \)
(II) \( \frac{\sigma}{2\epsilon_0} \)
(III) 0
(IV) \( \frac{\sigma}{\epsilon_0 r^2} \) Choose the correct answer from the options given below: