Question

For an n-type silicon, an extrinsic semiconductor, the natural logarithm of normalized conductivity (σ) is plotted as a function of inverse temperature. Temperature interval-I corresponds to the intrinsic regime, interval-II corresponds to saturation regime and interval-III corresponds to the freeze-out regime, respectively. Then

• A. the magnitude of the slope of the curve in the temperature interval-I is proportional to the bandgap, E_g
• B. the magnitude of the slope of the curve in the temperature interval-III is proportional to the ionization energy of the donor, E_d
• C. in the temperature interval-II, the carrier density in the conduction band is equal to the density of donors
• D. in the temperature interval-III, all the donor levels are ionized

Answer 1

The Correct Option is A, B, C

The correct option is (A): the magnitude of the slope of the curve in the temperature interval-I is proportional to the bandgap, E_g, (B): the magnitude of the slope of the curve in the temperature interval-III is proportional to the ionization energy of the donor, E_d and (C): in the temperature interval-II, the carrier density in the conduction band is equal to the density of donors