Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to \((E_g)_C, (E_g)_{Si}\) and \((E_g)_{Ge}\). Which of the following statements is true?
\((E_g)_{Si} < (E_g)_{Ge} < (E_g)_C\)
\((E_g)_C < (E_g)_{Ge} > (E_g)_{Si}\)
\((E_g)_C > (E_g)_{Si} > (E_g)_{Ge}\)
\((E_g)_C = (E_g)_{Si} = (E_g)_{Ge}\)
For given three elements, he energy band gap of carbon is the maximum and that of germanium is the least. The energy band gap of these elements are related as:\( (E_g)_C > (E_g)_{Si} > (E_g)_{Ge}\)
Therefore, the correct statement is (c).
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.
Assertion : In a semiconductor diode, the thickness of the depletion layer is not fixed.
Reason (R): Thickness of depletion layer in a semiconductor device depends upon many factors such as biasing of the semiconductor.
Semiconductors are a crystalline solid materials, whose electrical conductivity lies between a conductor and an insulator. Semiconductors are mainly used in the manufacturing of electronic devices like capacitors, transistors, diodes, Integrated circuits, etc.