The ratio of dopant atoms to silicon atoms is given as: \[ \frac{\text{Number of dopant atoms}}{\text{Number of silicon atoms}} = \frac{1}{5 \times 10^7} \]
The number density of silicon atoms is \( 5 \times 10^{28} \) atoms/m\(^3\). The number of dopant atoms per cubic metre is: \[ \text{Number of dopant atoms} = \frac{1}{5 \times 10^7} \times 5 \times 10^{28} = 10^{21} \, \text{dopant atoms/m}^3 \]
Since each dopant atom creates one hole in the semiconductor, the number of holes created per cubic metre is equal to the number of dopant atoms: \[ \text{Number of holes} = 10^{21} \, \text{holes/m}^3 \]
Since \( 1 \, \text{m}^3 = 10^6 \, \text{cm}^3 \), the number of holes per cubic centimetre is: \[ \text{Number of holes} = \frac{10^{21}}{10^6} = 10^{15} \, \text{holes/cm}^3 \]
One example of a dopant used in p-type silicon is **boron (B)**. Boron atoms have one fewer valence electron than silicon, creating a hole in the crystal lattice when substituted for a silicon atom.
The number of holes created per cubic centimetre in the specimen due to doping is \( \boxed{10^{15}} \, \text{holes/cm}^3 \).