Question

Assertion (A): We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically joining it to another slab of an n-type semiconductor.
Reason (R): In a p-type semiconductor \( \eta_e \gg \eta_h \) while in an n-type semiconductor \( \eta_h \gg \eta_e \).

• A. Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A).
• B. Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of the Assertion (A).
• C. Assertion (A) is true, but Reason (R) is false.
• D. Assertion (A) is false and Reason (R) is also false.

Hint:

In semiconductors, p-n junctions are formed by joining p-type and n-type materials, regardless of the hole and electron concentration ratios.

Answer 1

The Correct Option is C

In a p-n junction diode, a p-type semiconductor and an n-type semiconductor must be physically joined together. However, the reasoning provided in the statement is incorrect. The ratio of electron and hole concentrations does not directly affect the ability to form a p-n junction diode, as the junction can still form despite differing carrier concentrations. Hence, Assertion (A) is true, but Reason (R) is false.