In an intrinsic semiconductor, carrier’s concentration is \( 5 \times 10^8 \ \text{m}^{-3} \). On doping with impurity atoms, the hole concentration becomes \( 8 \times 10^{12} \ \text{m}^{-3} \).
[(a)] Identify (i) the type of dopant and (ii) the extrinsic semiconductor so formed.
[(b)] Calculate the electron concentration in the extrinsic semiconductor.