List of top Physics Questions on Semiconductor electronics: materials, devices and simple circuits asked in NEET (UG)

The I-V characteristics shown above are exhibited by a:

A full wave rectifier circuit consists of two p-n junction diodes, a centre-tapped transformer, capacitor and a load resistance. Which of these components remove the ac ripple from the rectified output?

Given below are two statements:
Statement I: Photovoltaic devices can convert optical radiation into electricity.
Statement II: Zener diode is designed to operate under reverse bias in breakdown region.
In the light of the above statements, choose the most appropriate answer from the options given below:

In half wave rectification, if the input frequency is 60 Hz, then the output frequency would be:

In the given circuits (a), (b) and (c), the potential drop across the two p-n junctions are equal in:

The truth table for the given logic circuit is:

The electron concentration in an n-type semiconductor is the same as the hole concentration in a p-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them

Consider the following statements (A) and (B) and identify the correct answer. 
(A) A zener diode is connected in reverse bias when used as a voltage regulator. 
(B) The potential barrier of the p-n junction lies between 0.1 V to 0.3 V.

For the given circuit, the input digital signals are applied at the terminals A, B and C. What would be the output at the terminal y?

The solids which have negative temperature coefficient of resistance are :

The increase in the width of the depletion region in a p-n junction diode is due to :

For transistor action, which of the following statements is correct ?

For the logic circuit shown, the truth table is :

For a p-type semiconductor, which of the following statements is true ?

In the combination of the following gates the output $Y$ can be written in terms of inputs $A$ and $B$ as

In the circuit shown in the figure, the input voltage $V_i$ is $20 \, V , V_{BE} = 0$ and $V_{CE} = 0$ .The values of $I_B , I_C$ and $\beta$ are given by

In a $p-n$ junction diode, change in temperature due to heating

In the circuit shown in the figure, the input voltage $V_i$ is $20 \, V , V_{BE} = 0$ and $V_{CE} = 0$ .The values of $I_B , I_C$ and $\beta$ are given by

In a $p-n$ junction diode, change in temperature due to heating

In a common emitter transistor amplifier the audio signal voltage across the collector is 3 V. The resistance of collector is 3 kΩ. If current gain is 100 and the base resistance is 2 kΩ, the voltage and power gain of the amplifier is

The given electrical network is equivalent to :

In a common emitter transistor amplifier the audio signal voltage across the collector is $3\,V$. The resistance of collector is $3\, k\Omega$. If current gain is $100$ and the base resistance is $2\, k\Omega$, the voltage and power gain of the amplifier is :

For $CE$ transistor amplifier, the audio signal voltage across the collector resistance of $2 k \Omega$ is $4\, V$. If the current amplification factor of the transistor is $100$ and the base resistance is $1 \, k\Omega$, then the input signal voltage is

Consider the junction diode as ideal. The value of current flowing through $AB$ is :