
In the given problem, the diode is in forward bias, and we need to calculate the current \(i\) using Ohm's Law.
Ohm's law is given by:
\(i = \frac{\Delta V}{R}\),
where:
Substituting the given values:
\(i = \frac{\Delta V}{R} = \frac{4 - (-6)}{1 \times 10^3}\)
Now, calculating the voltage difference:
\(i = \frac{4 + 6}{1 \times 10^3} = \frac{10}{10^3}\)
Finally, we get:
\(i = 10^{-2} \, A\)
The current flowing through the diode when it is in forward bias is 10-2 A.
Assertion (A): We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically joining it to another slab of an n-type semiconductor.
Reason (R): In a p-type semiconductor, \( n_e \gg n_h \) while in an n-type semiconductor \( n_h \gg n_e \).
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.

Semiconductors are a crystalline solid materials, whose electrical conductivity lies between a conductor and an insulator. Semiconductors are mainly used in the manufacturing of electronic devices like capacitors, transistors, diodes, Integrated circuits, etc.