The correct option is(B): 150 and 15000.
Current gain \((\beta)=100\)
Voltage gain \((A _{ V }) =\beta \frac{R_{c}}{R_{b}}\)
\(=100\left(\frac{3}{2}\right)\)
\(=150\)
Power gain \(= A_{v} \beta\)
\(= 150(100)\)
\(= 15000\)
Assertion (A): We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically joining it to another slab of an n-type semiconductor.
Reason (R): In a p-type semiconductor, \( n_e \gg n_h \) while in an n-type semiconductor \( n_h \gg n_e \).
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.

Semiconductors are a crystalline solid materials, whose electrical conductivity lies between a conductor and an insulator. Semiconductors are mainly used in the manufacturing of electronic devices like capacitors, transistors, diodes, Integrated circuits, etc.