If the number of electron-hole pairs per cm\(^3\) of an intrinsic Si wafer at temperature 300 K is \(1.1 \times 10^{10}\) and the mobilities of electrons and holes at 300 K are 1500 and 500 cm\(^2\) per volt, second, respectively, then the conductivity of the Si wafer at this temperature (in \(\mu\)mho cm\(^{-1}\)) is nearly: