Question:

Band gap energy of Si is:

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The band gap energy of semiconductors like silicon is important in determining their electrical properties and is often used in the context of semiconductor physics and devices like transistors and diodes.
Updated On: Apr 25, 2025
  • 0.8 eV
  • 1.1 eV
  • 2.3 eV
  • 3.5 eV
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The Correct Option is B

Solution and Explanation


The band gap energy refers to the energy difference between the conduction band and the valence band in a semiconductor. For silicon (Si), the band gap is typically 1.1 eV at room temperature (300K). - 0.8 eV: This value is closer to the band gap of germanium (Ge), not silicon. - 1.1 eV: This is the correct value for silicon at room temperature. - 2.3 eV: This value is closer to the band gap of gallium arsenide (GaAs), not silicon. - 3.5 eV: This is the band gap of diamond, not silicon. Thus, the band gap energy of silicon is 1.1 eV.
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