A bar of silicon is doped with boron concentration of \( 10^{16} \, \text{cm}^{-3} \) and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of \( 10^{20} \, \text{cm}^{-3} \, \text{s}^{-1} \). If the recombination lifetime is 100 µs, intrinsic carrier concentration of silicon is \( 10^{10} \, \text{cm}^{-3} \) and assuming 100\% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is