To determine which p-n junctions are forward biased, we analyze the potential connections:
Characteristics of forward bias:
Analysis of each junction:
Junction | Connection | Bias Type |
---|---|---|
(A) | -ve to p, +ve to n | Reverse |
(B) | +ve to p, -ve to n | Forward |
(C) | +ve to p, -ve to n | Forward |
(D) | +ve to p, -ve to n | Forward |
The forward biased junctions are:
(3) (B), (C) and (D) only
Note: Junction (A) is reverse biased as it has opposite connections.
For a p-n junction to be forward biased, the potential on the p-side must be higher than the potential on the n-side.
Let’s examine each configuration:-
Configuration (A): The p-side is at −5 V and the n-side
is at −3 V. Since the n-side is at a higher potential, this junction is reverse-biased.
- Configuration (B): The p-side is at 0 V and the n-side is at −3 V. Since the p-side is at a higher potential, this junction is forward-biased.
- Configuration (C): The p-side is at 7 V and the n-side is at 3 V. Since the p-side is at a higher potential, this junction is forward-biased.
- Configuration (D): The p-side is at −10 V and the n-side is at −20 V. Since the p-side is at a higher potential, this junction is forward-biased.
Thus, the forward-biased junctions are (B), (C), and (D).
A pure silicon crystal with 5 × 1028 atoms m−3 has ni = 1.5 × 1016 m−3. It is doped with a concentration of 1 in 105 pentavalent atoms, the number density of holes (per m3) in the doped semiconductor will be: