Dynamic resistance
\(=\)\(\frac{dV}{dl}\)
\(⇒\) \(r_1 = \frac{2.1 - 2 \, \text{k}\Omega}{10^{-5}}\)
and \(r_2 = \frac{4.2 - 4 \, \text{k}\Omega}{250 - 200}\)
\(⇒ \)\(r1 :r2 = 5 : 1.\)
So,Correct option is (B)
An alternating voltage is given by \( e = 8 \sin(628.4 t) \).
Find:
(i) Peak value of e.m.f.
(ii) Frequency of e.m.f.
(iii) Instantaneous value of e.m.f. at time \( t = 10 \, {ms} \)
Let \( y = f(x) \) be the solution of the differential equation
\[ \frac{dy}{dx} + 3y \tan^2 x + 3y = \sec^2 x \]
such that \( f(0) = \frac{e^3}{3} + 1 \), then \( f\left( \frac{\pi}{4} \right) \) is equal to:
Find the IUPAC name of the compound.
If \( \lim_{x \to 0} \left( \frac{\tan x}{x} \right)^{\frac{1}{x^2}} = p \), then \( 96 \ln p \) is: 32
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
in p-n junction diode two operating regions are there:
There are three biasing conditions for p-n junction diode are as follows: