The correct option is(B): 16.5 days.
Using \(N=N_0e^{-\lambda t}\)
Where \(\lambda=\frac{1n2}{t_{1/2}}=\frac{1n(2)}{3.8}\)
\(\therefore\) \(\frac{N_0}{20}=N_0e^{-\frac{1n(2)}{3.8}}t\)
Solving this equation with the help of given data we find :
t = 16.5 days.
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.
Assertion : In a semiconductor diode, the thickness of the depletion layer is not fixed.
Reason (R): Thickness of depletion layer in a semiconductor device depends upon many factors such as biasing of the semiconductor.
Let $ S $ denote the locus of the point of intersection of the pair of lines $$ 4x - 3y = 12\alpha,\quad 4\alpha x + 3\alpha y = 12, $$ where $ \alpha $ varies over the set of non-zero real numbers. Let $ T $ be the tangent to $ S $ passing through the points $ (p, 0) $ and $ (0, q) $, $ q > 0 $, and parallel to the line $ 4x - \frac{3}{\sqrt{2}} y = 0 $.
Then the value of $ pq $ is
Semiconductors are a crystalline solid materials, whose electrical conductivity lies between a conductor and an insulator. Semiconductors are mainly used in the manufacturing of electronic devices like capacitors, transistors, diodes, Integrated circuits, etc.