From the circuit figure, we can observe the following currents at junction point I:
Branch | Current | Direction |
---|---|---|
A | 0.2 A | Entering |
A | 0.2 A | Entering |
B | 1.2 A | Entering |
B | 0.5 A | Leaving |
Applying Kirchhoff's Current Law (KCL) at junction I:
ΣIentering = ΣIleaving
(0.2 A + 0.2 A + 1.2 A) = (0.5 A + IA)
1.6 A = 0.5 A + IA
IA = 1.6 A - 0.5 A = 1.1 A
The current marked IA is approximately 1.1 A.
Applying Kirchhoff's Current Law (KCL) at node A: The sum of currents entering a node is equal to the sum of currents leaving the node.
In this case:
Current entering A: \( 0.2 \, \text{A} + 0.2 \, \text{A} = 0.4 \, \text{A} \)
Current leaving A: \( I_A \)
Therefore: \( 0.4 \, \text{A} = I_A + I_{AB} \)
At node B:
Current entering B: \( I_{AB} + 1.2 \, \text{A} \)
Current leaving B: \( 0.5 \, \text{A} \)
Therefore: \(I_{AB} + 1.2 \, \text{A} = 0.5 \, \text{A} \) which means \( I_{AB} = 0.5 -1.2 = -0.7 A \)
Substituting the value of \(I_{AB}\) into the equaition \( 0.4 \, \text{A} = I_A + I_{AB} \)
Therefore: \( 0.4 = I_A - 0.7 \)
\( I_A = 0.4 + 0.7 = 1.1 A \)
A pure silicon crystal with 5 × 1028 atoms m−3 has ni = 1.5 × 1016 m−3. It is doped with a concentration of 1 in 105 pentavalent atoms, the number density of holes (per m3) in the doped semiconductor will be: