The V-I characteristics of a diode can be divided into two distinct regions:
In the forward bias region, the p-side of the diode is connected to the positive terminal of the battery, and the n-side is connected to the negative terminal. In this region, the current increases exponentially as the voltage increases. Initially, there is very little current, but once the threshold voltage (typically around 0.7 V for silicon diodes) is reached, the current rises sharply.
In the reverse bias region, the current remains very small (almost zero) until the reverse breakdown voltage is reached. After that, the current increases drastically in the reverse direction. This reverse breakdown occurs when the voltage exceeds a critical value, causing the diode to conduct in reverse.