In a PN junction :
High potential at N side and low potential at P side
High potential at P side and low potential at N side
P and N both are at same potential
Undetermined
The correct option is (A): High potential at the N side and low potential at the P side
Assuming in forward bias condition there is a voltage drop of \(0.7\) V across a silicon diode, the current through diode \(D_1\) in the circuit shown is ________ mA. (Assume all diodes in the given circuit are identical) 


For the given logic gate circuit, which of the following is the correct truth table ? 
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The output (Y) of the given logic implementation is similar to the output of an/a …………. gate.
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
in p-n junction diode two operating regions are there:
There are three biasing conditions for p-n junction diode are as follows: