To determine the value of \(X\), we need to calculate the band gap energy of the photodiode, given that it starts changing its conductivity when illuminated with light whose wavelength is less than 660 nm.
The energy \(E\) of a photon is related to its wavelength \(\lambda\) by the formula:
\(E = \frac{hc}{\lambda}\)
where:
Substituting these values into the formula, we get:
\(E = \frac{6.6 \times 10^{-34} \times 3 \times 10^8}{660 \times 10^{-9}}\)
Calculating the above expression gives:
\(E = \frac{6.6 \times 3}{660} \times 10^{-34 + 8 + 9} \, \text{eV}\)
Simplifying gives:
\(E = \frac{6.6 \times 3}{660} \times 10^{-17} \, \text{eV}\)
\(E = \frac{19.8}{660} \times 10^{-17} \, \text{eV}\)
\(E \approx 3.0 \times 10^{-19} \, \text{J}\)
To convert energy from joules to electron volts, use the conversion factor \(1 \, \text{eV} = 1.6 \times 10^{-19} \, \text{J}\):
\(E = \frac{3.0 \times 10^{-19}}{1.6 \times 10^{-19}} \, \text{eV}\)
\(E \approx 1.875 \, \text{eV}\)
The band gap \(E_g\) is given as \(\frac{X}{8} \, \text{eV}\), so we equate and solve for \(X\):
\(\frac{X}{8} = 1.875\)
Therefore,
\(X = 1.875 \times 8 = 15\)
Hence, the value of \(X\) is 15. Thus, the correct answer is 15.
Given: - Wavelength of light, \( \lambda = 660 \, \text{nm} = 660 \times 10^{-9} \, \text{m} \) - Planck's constant, \( h = 6.6 \times 10^{-34} \, \text{Js} \) - Charge of an electron, \( e = 1.6 \times 10^{-19} \, \text{C} \)
The energy \( E \) of a photon is given by:
\[ E = \frac{hc}{\lambda} \]
where \( c \) is the speed of light, \( c = 3 \times 10^8 \, \text{m/s} \). Substituting the given values:
\[ E = \frac{6.6 \times 10^{-34} \times 3 \times 10^8}{660 \times 10^{-9}} \, \text{J} \]
Simplifying:
\[ E = \frac{19.8 \times 10^{-26}}{660 \times 10^{-9}} \, \text{J} \] \[ E = 3 \times 10^{-19} \, \text{J} \]
To convert the energy from joules to electron volts (eV), we use:
\[ 1 \, \text{eV} = 1.6 \times 10^{-19} \, \text{J} \]
Thus:
\[ E = \frac{3 \times 10^{-19}}{1.6 \times 10^{-19}} \, \text{eV} \] \[ E = 1.875 \, \text{eV} \]
Given that the band gap of the photodiode is \( \frac{X}{8} \, \text{eV} \):
\[ \frac{X}{8} = 1.875 \]
Solving for \( X \):
\[ X = 1.875 \times 8 \] \[ X = 15 \]
The value of \( X \) is 15.
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.

Assertion (A): We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically joining it to another slab of an n-type semiconductor.
Reason (R): In a p-type semiconductor, \( n_e \gg n_h \) while in an n-type semiconductor \( n_h \gg n_e \).
A point particle of charge \( Q \) is located at \( P \) along the axis of an electric dipole 1 at a distance \( r \) as shown in the figure. The point \( P \) is also on the equatorial plane of a second electric dipole 2 at a distance \( r \). The dipoles are made of opposite charge \( q \) separated by a distance \( 2a \). For the charge particle at \( P \) not to experience any net force, which of the following correctly describes the situation?

