Transistor Current Gain (\(\beta\)): \(\beta\) (current gain) is given by the change in collector current (\(\triangle \text{I}_C\)) divided by the change in base current (\(\triangle \text{I}_B\)).
In this case, \(\triangle \text{I}_C\) = 10 mA - 5 mA = 5 mA
and \(\triangle \text{I}_B\) = 150 μA - 100 μA = 50 μA.
So, \(\beta\) = \(\frac{\triangle \text{I}_C}{\triangle \text{I}_B}\) =\(\frac{5 mA}{50 \mu A}\) = 100.
Therefore, the correct option is (C): 100
Assertion (A): We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically joining it to another slab of an n-type semiconductor.
Reason (R): In a p-type semiconductor, \( n_e \gg n_h \) while in an n-type semiconductor \( n_h \gg n_e \).
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.

Semiconductors are a crystalline solid materials, whose electrical conductivity lies between a conductor and an insulator. Semiconductors are mainly used in the manufacturing of electronic devices like capacitors, transistors, diodes, Integrated circuits, etc.