A potential barrier of 0.4 V exists across a p-n junction. An electron enters the junction from the n-side with a speed of 6.0 × 105 ms–1. The speed with which electrons enters the p side will be
\(\frac{x}{3} × 10^5\) ms-1
the value of x is _________.
(Give mass of electron = 9 × 10–31 kg, charge on electron = 1.6 × 10–19 C)
The correct answer is 14
Conserving energy,
\(\frac{1}{2} mv² = \frac{1}{2} m ( 6 × 10^5)^2 - 0.4eV\)
\(⇒ v = \sqrt{( 6 × 10^5)^2 - \frac{2 × 1.6 × 10^{-19} × 0.4}{9 × 10^{-31} }}\)
\(=\sqrt{36 × 10^{10} - \frac{1.28}{9} × 10^{12}}\)
\(⇒ v = \frac{14}{3} × 10^5 m/s\)
⇒ x = 14
There , the speed will be 14 m/s
Assertion (A): We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically joining it to another slab of an n-type semiconductor.
Reason (R): In a p-type semiconductor, \( n_e \gg n_h \) while in an n-type semiconductor \( n_h \gg n_e \).
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.

Consider the following sequence of reactions : 
Molar mass of the product formed (A) is ______ g mol\(^{-1}\).
The magnitude of heat exchanged by a system for the given cyclic process ABC (as shown in the figure) is (in SI units):

Semiconductors are a crystalline solid materials, whose electrical conductivity lies between a conductor and an insulator. Semiconductors are mainly used in the manufacturing of electronic devices like capacitors, transistors, diodes, Integrated circuits, etc.