A potential barrier of 0.4 V exists across a p-n junction. An electron enters the junction from the n-side with a speed of 6.0 × 105 ms–1. The speed with which electrons enters the p side will be
\(\frac{x}{3} × 10^5\) ms-1
the value of x is _________.
(Give mass of electron = 9 × 10–31 kg, charge on electron = 1.6 × 10–19 C)
The correct answer is 14
Conserving energy,
\(\frac{1}{2} mv² = \frac{1}{2} m ( 6 × 10^5)^2 - 0.4eV\)
\(⇒ v = \sqrt{( 6 × 10^5)^2 - \frac{2 × 1.6 × 10^{-19} × 0.4}{9 × 10^{-31} }}\)
\(=\sqrt{36 × 10^{10} - \frac{1.28}{9} × 10^{12}}\)
\(⇒ v = \frac{14}{3} × 10^5 m/s\)
⇒ x = 14
There , the speed will be 14 m/s
Assuming in forward bias condition there is a voltage drop of \(0.7\) V across a silicon diode, the current through diode \(D_1\) in the circuit shown is ________ mA. (Assume all diodes in the given circuit are identical) 


For the given logic gate circuit, which of the following is the correct truth table ? 
In the given figure, the blocks $A$, $B$ and $C$ weigh $4\,\text{kg}$, $6\,\text{kg}$ and $8\,\text{kg}$ respectively. The coefficient of sliding friction between any two surfaces is $0.5$. The force $\vec{F}$ required to slide the block $C$ with constant speed is ___ N.
(Given: $g = 10\,\text{m s}^{-2}$) 
The equivalent resistance between the points \(A\) and \(B\) in the given circuit is \[ \frac{x}{5}\,\Omega. \] Find the value of \(x\). 
Semiconductors are a crystalline solid materials, whose electrical conductivity lies between a conductor and an insulator. Semiconductors are mainly used in the manufacturing of electronic devices like capacitors, transistors, diodes, Integrated circuits, etc.