A potential barrier of 0.4 V exists across a p-n junction. An electron enters the junction from the n-side with a speed of 6.0 × 105 ms–1. The speed with which electrons enters the p side will be
\(\frac{x}{3} × 10^5\) ms-1
the value of x is _________.
(Give mass of electron = 9 × 10–31 kg, charge on electron = 1.6 × 10–19 C)
The correct answer is 14
Conserving energy,
\(\frac{1}{2} mv² = \frac{1}{2} m ( 6 × 10^5)^2 - 0.4eV\)
\(⇒ v = \sqrt{( 6 × 10^5)^2 - \frac{2 × 1.6 × 10^{-19} × 0.4}{9 × 10^{-31} }}\)
\(=\sqrt{36 × 10^{10} - \frac{1.28}{9} × 10^{12}}\)
\(⇒ v = \frac{14}{3} × 10^5 m/s\)
⇒ x = 14
There , the speed will be 14 m/s
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.
Assertion : In a semiconductor diode, the thickness of the depletion layer is not fixed.
Reason (R): Thickness of depletion layer in a semiconductor device depends upon many factors such as biasing of the semiconductor.
Let \[ I(x) = \int \frac{dx}{(x-11)^{\frac{11}{13}} (x+15)^{\frac{15}{13}}} \] If \[ I(37) - I(24) = \frac{1}{4} \left( b^{\frac{1}{13}} - c^{\frac{1}{13}} \right) \] where \( b, c \in \mathbb{N} \), then \[ 3(b + c) \] is equal to:
For the thermal decomposition of \( N_2O_5(g) \) at constant volume, the following table can be formed, for the reaction mentioned below: \[ 2 N_2O_5(g) \rightarrow 2 N_2O_4(g) + O_2(g) \] Given: Rate constant for the reaction is \( 4.606 \times 10^{-2} \text{ s}^{-1} \).
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