Given:
\(\alpha = 0.96\)
Using the formula for $\beta$:
\(\beta = \frac{\alpha}{1 - \alpha}\)
\(\beta = \frac{0.96}{0.04}\)
\(\Rightarrow \beta = 24\)
Using the formula for voltage gain in common emitter configuration:
\(A_V = \beta \times \frac{R_L}{R_1}\)
\(A_V = 24 \times \frac{800}{192}\)
\(\Rightarrow A_V = 100\)
Using the formula for power gain:
\(P_V = \beta \times A_V\)
\(P_V = 24 \times 100\)
\(\Rightarrow P_V = 2400\)
Using the formula for voltage gain in common base configuration:
\(A_V = \alpha \times \frac{R_L}{R_P}\)
\(A_V = 0.96 \times \frac{800}{192}\)
\(\Rightarrow A_V = 4\)
Using the formula for power gain in common base configuration:
\(P_V = A_V \times \alpha\)
\(P_V = 4 \times 0.96\)
\(\Rightarrow P_V = 3.84\)
The problem asks about the common emitter configuration, but we have also calculated the values for the common base configuration. Based on the above calculations, the voltage gain and power gain for the common emitter configuration are:
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.
In the given circuit, the equivalent resistance between points A and D is:
AB is a part of an electrical circuit (see figure). The potential difference \(V_A - V_B\), at the instant when current \(i = 2\) A and is increasing at a rate of 1 amp/second is:
Semiconductors are a crystalline solid materials, whose electrical conductivity lies between a conductor and an insulator. Semiconductors are mainly used in the manufacturing of electronic devices like capacitors, transistors, diodes, Integrated circuits, etc.