The concentration of hole-electron pairs in pure silicon at 300 K is \(7 \times 10^{15} \, \text{m}^{-3}\). Antimony is doped into silicon in proportions of \(1 \, \text{atom per} \, 10^7 \, \text{atoms}\), and half of the impurity atoms contribute electrons. The factor by which the number of charge carriers increases due to doping is: