A potential difference of $2\, V$ is applied between the opposite faces of a $Ge$ crystal plate of area $1\, cm ^{2}$ and thickness $0.5 mm$. If the concentration of electrons in $Ge$ is $2 \times 10^{19} / m ^{2}$ and mobilities of electrons and holes are $0.36\, m ^{2} V ^{-1} s ^{-1}$ and $0.14\, m ^{2} V ^{-1} s ^{-1}$ respectively, then the current flowing through the plate will be