



To determine the correct diode circuit used for measuring the dynamic resistance of a p-n junction diode, we need to understand the concept of biasing in diodes.
Concept Explanation:
Analysis of Options:

Conclusion:
The correct answer is Option 2, which shows the correct forward biasing configuration necessary for measuring the dynamic resistance of a p-n junction diode. In this circuit, the diode is forward biased, allowing for the measurement of voltage change and current change as required for dynamic resistance calculation.
To determine which diode circuit shows the correct biasing used for the measurement of dynamic resistance of a p-n junction diode, it's important to understand the following concepts:
According to the information provided, the correct biasing involves forward-biasing the diode.
Correct Option:

This circuit configuration correctly forward-biases the diode by connecting the p-side to a positive terminal and the n-side to a negative terminal, which is necessary for dynamic resistance measurements.
The other options likely show either reverse bias configurations or non-standard measurement setups which are unsuitable for dynamic resistance measurement.
In conclusion, the correct approach for examining dynamic resistance in diodes is to ensure they are forward-biased, thereby permitting the assessment of small-signal behavior accurately.
Assertion (A): We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically joining it to another slab of an n-type semiconductor.
Reason (R): In a p-type semiconductor, \( n_e \gg n_h \) while in an n-type semiconductor \( n_h \gg n_e \).
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.

Consider the following sequence of reactions : 
Molar mass of the product formed (A) is ______ g mol\(^{-1}\).