Step 1: Recall the low-field relationship.
At low electric fields (\(E\)), the drift velocity (\(v_d\)) of charge carriers is directly proportional to the field strength. The constant of proportionality is the mobility (\(\mu\)):
\[ v_d = \mu E \]
In this region, mobility is approximately constant.
Step 2: Analyze the high-field behavior.
As the electric field becomes very strong, carriers are accelerated to high energies between collisions with the crystal lattice. At these high energies, new scattering mechanisms (like optical phonon emission) become dominant and very effective at removing energy from the carriers. This increased scattering rate limits the average velocity that the carriers can attain.
Step 3: Describe velocity saturation.
Due to the increased scattering at high fields, the drift velocity no longer increases linearly with the field. Instead, it approaches a maximum constant value called the saturation velocity (\(v_{sat}\)). The velocity stops increasing even if the electric field increases further.
Step 4: Infer the effect on mobility.
Mobility is defined as \(\mu = v_d / E\). In the high-field region, as \(E\) increases, \(v_d\) approaches a constant value \(v_{sat}\). For the equation to hold, the mobility \(\mu\) must decrease.
\[ \mu(E) = \frac{v_{sat}}{E} \]
As E increases, \(\mu\) decreases.
Therefore, under high electric fields, mobility decreases and velocity saturates.