Question:
The energy gap (eV) at 300K of the material GaAs is
The energy gap (eV) at 300K of the material GaAs is
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- Si (Silicon): 1.1 eV
- GaAs (Gallium Arsenide): 1.42 eV
- Ge (Germanium): 0.66 eV
Updated On: Feb 4, 2025
- 0.36
- 0.85
- 1.20
- 1.42
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The Correct Option is D
Solution and Explanation
Step 1: Understanding bandgap energy. - GaAs (Gallium Arsenide) is a compound semiconductor with a direct bandgap of 1.42 eV at 300K.
Step 2: Selecting the correct option. Since the bandgap of GaAs is 1.42 eV, the correct answer is (D).
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