To solve this problem, we need to determine the maximum wavelength of light that can create a hole in a p-type semiconductor with an acceptor level of 6 eV. This involves using the relationship between energy, wavelength, and the quantum nature of light.
The energy \(E\) of a photon is related to its wavelength \(\lambda\) via the equation:
\(E = \frac{hc}{\lambda}\)
where:
Given that \(hc = 1242 \, \text{eV nm}\) and the acceptor level energy \(E = 6 \, \text{eV}\), we need to find the maximum wavelength \(\lambda\) that can induce transitions corresponding to this energy level.
Re-arranging the formula for wavelength, we get:
\(\lambda = \frac{hc}{E}\)
Substituting the provided values:
\(\lambda = \frac{1242 \, \text{eV nm}}{6 \, \text{eV}}\)
Calculating this gives:
\(\lambda = 207 \, \text{nm}\)
Thus, the maximum wavelength of light that can create a hole in this semiconductor is 207 nm.
Let's justify this answer:
Therefore, the correct answer is 207 nm.
The energy \( E \) of a photon is given by:
\[E = \frac{hc}{\lambda}\]
\[35\]
Substitute \( E = 6 \, \text{eV} \) and \( hc = 1240 \, \text{eV} \text{nm} \):
\[6 = \frac{1240}{\lambda \, (\text{nm})}\]
Rearrange to find \( \lambda \):
\[\lambda = \frac{1240}{6} = 207 \, \text{nm}\]
Assuming in forward bias condition there is a voltage drop of \(0.7\) V across a silicon diode, the current through diode \(D_1\) in the circuit shown is ________ mA. (Assume all diodes in the given circuit are identical) 


For the given logic gate circuit, which of the following is the correct truth table ? 
The given circuit works as: 
Consider an A.P. $a_1,a_2,\ldots,a_n$; $a_1>0$. If $a_2-a_1=-\dfrac{3}{4}$, $a_n=\dfrac{1}{4}a_1$, and \[ \sum_{i=1}^{n} a_i=\frac{525}{2}, \] then $\sum_{i=1}^{17} a_i$ is equal to
