To determine the dopants that can create an n-type semiconductor in silicon, we need to understand the concept of doping.
Doping:
Doping involves adding impurities to a semiconductor to alter its conductivity.
n-type Semiconductor:
An n-type semiconductor is created by adding impurities with more valence electrons than silicon (which has 4 valence electrons). These impurities donate extra electrons, increasing the number of free electrons and thus the conductivity.
p-type Semiconductor:
A p-type semiconductor is created by adding impurities with fewer valence electrons than silicon. These impurities create "holes" (electron vacancies), which act as positive charge carriers, increasing conductivity.
Analysis of Dopants:
Therefore, to create an n-type semiconductor, we can use Arsenic (A) and Phosphorus (C).
The correct answer is:
Option 1: (A) and (C) only
A pure silicon crystal with 5 × 1028 atoms m−3 has ni = 1.5 × 1016 m−3. It is doped with a concentration of 1 in 105 pentavalent atoms, the number density of holes (per m3) in the doped semiconductor will be: