Reverse bias applied to a junction diode
- Lowers the potential barrier
- raises the potential barrier
- increases the majority carrier current
- increases the minority carrier current
The Correct Option is B
Solution and Explanation
When a diode is reverse-biased, it increases the width of the depletion region, effectively making it more difficult for charge carriers to cross the junction. This results in a higher potential barrier for carriers trying to move from the p-side to the n-side (electrons in the case of an n-p junction).
So, the correct option is (B): raises the potential barrier
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Concepts Used:
P-n Junction
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
Biasing conditions for the p-n Junction Diode:
in p-n junction diode two operating regions are there:
- P-type
- N-type
There are three biasing conditions for p-n junction diode are as follows:
- Zero bias: When there is no external voltage applied to the p-n junction diode.
- Forward bias: P-type is connected to positive terminal of the voltage potential while n-type is connected to the negative terminal.
- Reverse bias: P-type is connected to negative terminal of the voltage potential while n-type is connected to the positive terminal.