In an n-type silicon, which of the following statement is true:
Electrons are majority carriers and trivalent atoms are the dopants.
Electrons are minority carriers and pentavalent atoms are the dopants.
Holes are minority carriers and pentavalent atoms are the dopants.
Holes are majority carriers and trivalent atoms are the dopants.
In an n-type silicon, the electrons are the majority carriers, while the holes are the minority carriers. An n-type semiconductor is obtained when pentavalent atoms, such as phosphorus, are doped in silicon atoms.
Therefore, the correct statement is (c).
Assertion (A): We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically joining it to another slab of an n-type semiconductor.
Reason (R): In a p-type semiconductor, \( n_e \gg n_h \) while in an n-type semiconductor \( n_h \gg n_e \).
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.

Semiconductors are a crystalline solid materials, whose electrical conductivity lies between a conductor and an insulator. Semiconductors are mainly used in the manufacturing of electronic devices like capacitors, transistors, diodes, Integrated circuits, etc.