In a semiconductor, the energy levels can be understood as follows:
- \( E_c \): Energy of the conduction band.
- \( E_v \): Energy of the valence band.
- \( E_D \): Donor energy level in a n-type semiconductor.
- \( E_g \): Band gap of the semiconductor.
For a n-type semiconductor:
- The donor level \( E_D \) is slightly below the conduction band \( E_c \), meaning electrons from the donor energy levels can easily move to the conduction band with minimal energy input.
- The band gap \( E_g \) is the energy difference between the conduction band and the valence band (\( E_c - E_v \)).
In n-type semiconductors, the donor energy level \( E_D \) is closer to the conduction band than to the valence band, so it follows that:
\[
E_D>E_v
\]
Thus, the correct answer is:
\[
\boxed{{C) } E_D>E_v}
\]