To find the value of $\beta$ in a bipolar junction transistor (BJT), we use the relationship between the emitter current ($I_E$), base current ($I_B$), and collector current ($I_C$). The formula is given by:
$I_E = I_C + I_B$
The current gain $\beta$ is defined as the ratio of the collector current to the base current:
$\beta = \frac{I_C}{I_B}$
Since $I_B = I_E - I_C$, we can substitute this into the equation for $\beta$:
$\beta = \frac{I_C}{I_E - I_C}$
Given that an increase in the emitter current by $4 \, \text{mA}$ results in an increase in the collector current by $3.5 \, \text{mA}$, the changes in respective currents are:
Assuming the transistor is operating in active mode, and the changes in current are proportionate, the change in equations can be used:
$\Delta I_E = \Delta I_C + \Delta I_B$
Using the known values:
$4 \, \text{mA} = 3.5 \, \text{mA} + \Delta I_B$
Rearranging gives:
$\Delta I_B = 4 \, \text{mA} - 3.5 \, \text{mA} = 0.5 \, \text{mA}$
Now we can find $\beta$:
$\beta = \frac{\Delta I_C}{\Delta I_B} = \frac{3.5 \, \text{mA}}{0.5 \, \text{mA}} = 7$
Thus, the correct answer is 7.
Assuming in forward bias condition there is a voltage drop of \(0.7\) V across a silicon diode, the current through diode \(D_1\) in the circuit shown is ________ mA. (Assume all diodes in the given circuit are identical) 


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