To find the value of $\beta$ in a bipolar junction transistor (BJT), we use the relationship between the emitter current ($I_E$), base current ($I_B$), and collector current ($I_C$). The formula is given by:
$I_E = I_C + I_B$
The current gain $\beta$ is defined as the ratio of the collector current to the base current:
$\beta = \frac{I_C}{I_B}$
Since $I_B = I_E - I_C$, we can substitute this into the equation for $\beta$:
$\beta = \frac{I_C}{I_E - I_C}$
Given that an increase in the emitter current by $4 \, \text{mA}$ results in an increase in the collector current by $3.5 \, \text{mA}$, the changes in respective currents are:
Assuming the transistor is operating in active mode, and the changes in current are proportionate, the change in equations can be used:
$\Delta I_E = \Delta I_C + \Delta I_B$
Using the known values:
$4 \, \text{mA} = 3.5 \, \text{mA} + \Delta I_B$
Rearranging gives:
$\Delta I_B = 4 \, \text{mA} - 3.5 \, \text{mA} = 0.5 \, \text{mA}$
Now we can find $\beta$:
$\beta = \frac{\Delta I_C}{\Delta I_B} = \frac{3.5 \, \text{mA}}{0.5 \, \text{mA}} = 7$
Thus, the correct answer is 7.
Assuming in forward bias condition there is a voltage drop of \(0.7\) V across a silicon diode, the current through diode \(D_1\) in the circuit shown is ________ mA. (Assume all diodes in the given circuit are identical) 


For the given logic gate circuit, which of the following is the correct truth table ? 
Which one of the following graphs accurately represents the plot of partial pressure of CS₂ vs its mole fraction in a mixture of acetone and CS₂ at constant temperature?

Let \( \alpha = \dfrac{-1 + i\sqrt{3}}{2} \) and \( \beta = \dfrac{-1 - i\sqrt{3}}{2} \), where \( i = \sqrt{-1} \). If
\[ (7 - 7\alpha + 9\beta)^{20} + (9 + 7\alpha - 7\beta)^{20} + (-7 + 9\alpha + 7\beta)^{20} + (14 + 7\alpha + 7\beta)^{20} = m^{10}, \] then the value of \( m \) is ___________.
Semiconductors are a crystalline solid materials, whose electrical conductivity lies between a conductor and an insulator. Semiconductors are mainly used in the manufacturing of electronic devices like capacitors, transistors, diodes, Integrated circuits, etc.