For an unbiased Silicon \(n\text{-}p\text{-}n\) transistor in thermal equilibrium, which one of the following electronic energy band diagrams is correct? (\(E_c\) = conduction band minimum, \(E_v\) = valence band maximum, \(E_F\) = Fermi level.)

Step 1: Condition for thermal equilibrium.
In thermal equilibrium, no net current flows, and therefore the Fermi level \(E_F\) remains constant throughout the device. Any variation in conduction (\(E_c\)) and valence (\(E_v\)) bands must adjust to maintain this constant Fermi level.
Step 2: Behavior across the junctions.
In an \(n\text{-}p\text{-}n\) transistor, at equilibrium:
- \(E_c\) is higher in the \(p\)-region and lower in the \(n\)-region.
- \(E_v\) follows the same curvature but in the opposite sense.
- \(E_F\) remains flat across the entire structure.
Step 3: Conclusion.
The correct band diagram is the one showing \(E_F\) constant and smooth bending of \(E_c\) and \(E_v\), corresponding to Option (A).

At a particular temperature T, Planck's energy density of black body radiation in terms of frequency is \(\rho_T(\nu) = 8 \times 10^{-18} \text{ J/m}^3 \text{ Hz}^{-1}\) at \(\nu = 3 \times 10^{14}\) Hz. Then Planck's energy density \(\rho_T(\lambda)\) at the corresponding wavelength (\(\lambda\)) has the value \rule{1cm}{0.15mm} \(\times 10^2 \text{ J/m}^4\). (in integer)
[Speed of light \(c = 3 \times 10^8\) m/s]
(Note: The unit for \(\rho_T(\nu)\) in the original problem was given as J/m³, which is dimensionally incorrect for a spectral density. The correct unit J/(m³·Hz) or J·s/m³ is used here for the solution.)