
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.

Assertion (A): We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically joining it to another slab of an n-type semiconductor.
Reason (R): In a p-type semiconductor, \( n_e \gg n_h \) while in an n-type semiconductor \( n_h \gg n_e \).
For the AC circuit shown in the figure, $ R = 100 \, \text{k}\Omega $ and $ C = 100 \, \text{pF} $, and the phase difference between $ V_{\text{in}} $ and $ (V_B - V_A) $ is 90°. The input signal frequency is $ 10^x $ rad/sec, where $ x $ is:
Two parabolas have the same focus $(4, 3)$ and their directrices are the $x$-axis and the $y$-axis, respectively. If these parabolas intersect at the points $A$ and $B$, then $(AB)^2$ is equal to:
A point particle of charge \( Q \) is located at \( P \) along the axis of an electric dipole 1 at a distance \( r \) as shown in the figure. The point \( P \) is also on the equatorial plane of a second electric dipole 2 at a distance \( r \). The dipoles are made of opposite charge \( q \) separated by a distance \( 2a \). For the charge particle at \( P \) not to experience any net force, which of the following correctly describes the situation?

Semiconductors are a crystalline solid materials, whose electrical conductivity lies between a conductor and an insulator. Semiconductors are mainly used in the manufacturing of electronic devices like capacitors, transistors, diodes, Integrated circuits, etc.