Step 1: Circuit Diagram for Forward Bias of p-n Junction Diode.
To obtain the characteristic curve of a p-n junction diode in forward bias, we need to connect the diode in a circuit with a variable power supply. The positive terminal of the power supply is connected to the p-type side (anode) of the diode, and the negative terminal is connected to the n-type side (cathode).
Step 2: Explanation of Circuit Diagram.
- A power supply provides a varying voltage across the diode.
- The anode of the diode is connected to the positive terminal, and the cathode to the negative terminal of the power supply.
- A milliammeter is connected in series with the diode to measure the current that flows through the circuit.
Step 3: Characteristic Curve.
When the diode is forward biased, the current increases as the applied voltage increases beyond a threshold (typically around 0.7V for silicon diodes). At lower voltages, the current is almost zero, but as the voltage increases, the current increases exponentially. The characteristic curve of a p-n junction diode in forward bias shows this exponential increase.
Step 4: Effect of Forward Bias on the Depletion Region.
- In forward bias, the external voltage decreases the width of the depletion region, allowing more charge carriers to recombine at the junction.
- As the forward voltage increases, the potential barrier decreases, and more charge carriers can cross the junction, leading to an increase in current.
Final Answer: In forward bias, the depletion region becomes narrower, and the current increases exponentially with the applied voltage after a certain threshold.
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