The barrier potential of a p-n junction diode is primarily determined by the difference in work functions between the p-type and n-type materials and the intrinsic properties of the materials themselves. It does not depend on diode design. On the other hand, temperature, doping density, and forward bias voltage can influence the barrier potential.
So, the correct option is (A): diode design
Assuming in forward bias condition there is a voltage drop of \(0.7\) V across a silicon diode, the current through diode \(D_1\) in the circuit shown is ________ mA. (Assume all diodes in the given circuit are identical) 


For the given logic gate circuit, which of the following is the correct truth table ? 
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The output (Y) of the given logic implementation is similar to the output of an/a …………. gate.
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
in p-n junction diode two operating regions are there:
There are three biasing conditions for p-n junction diode are as follows: