Barrier potential of a p-n junction diode does not depend on:
- diode design
- temperature
- forward bias
- doping density
The Correct Option is A
Solution and Explanation
The barrier potential of a p-n junction diode is primarily determined by the difference in work functions between the p-type and n-type materials and the intrinsic properties of the materials themselves. It does not depend on diode design. On the other hand, temperature, doping density, and forward bias voltage can influence the barrier potential.
So, the correct option is (A): diode design
Top Questions on Semiconductor electronics: materials, devices and simple circuits
Assertion (A): We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically joining it to another slab of an n-type semiconductor.
Reason (R): In a p-type semiconductor, \( n_e \gg n_h \) while in an n-type semiconductor \( n_h \gg n_e \).
- CBSE CLASS XII - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.
- CBSE CLASS XII - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- Draw circuit arrangement for studying V-I characteristics of a p-n junction diode.
(b) Show the shape of the characteristics of a diode.
(c) Mention two information that you can get from these characteristics.- CBSE CLASS XII - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- Explain the classification of conductors, insulators and semiconductors on the basis of energy bands.
- UP Board XII - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- Consider a n-type semiconductor in which $ n_e $ and $ n_h $ are the number of electrons and holes, respectively.
- JEE Main - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
Questions Asked in NEET exam
- A microscope has an objective of focal length \(f_o = 2\) cm and an eyepiece of focal length \(f_e = 4\) cm. The tube length of the microscope is \(L = 40\) cm. If the distance of distinct vision of eye is \(D = 25\) cm, the magnification in the microscope is:
- NEET (UG) - 2025
- Optical Instruments
- Which one of the following is an example of ex-situ conservation?
- NEET (UG) - 2025
- Ex-Situ Conservation
- Which one of the following compounds can exist as cis-trans isomers?
- NEET (UG) - 2025
- Organic Chemistry
- Who proposed that the genetic code for amino acids should be made up of three nucleotides?
- NEET (UG) - 2025
- Molecular Biology
- An electron (mass \(9 \times 10^{-31}\) kg and charge \(1.6 \times 10^{-19}\) C) moving with speed \(c/100\) (\(c\) = speed of light) is injected into a magnetic field of magnitude \(9 \times 10^{-4}\) T perpendicular to its direction of motion. We wish to apply a uniform electric field \( \vec{E} \) together with the magnetic field so that the electron does not deflect from its path. (speed of light \(c = 3 \times 10^8\) m/s):
- NEET (UG) - 2025
- Electric Field
Concepts Used:
P-n Junction
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
Biasing conditions for the p-n Junction Diode:
in p-n junction diode two operating regions are there:
- P-type
- N-type
There are three biasing conditions for p-n junction diode are as follows:
- Zero bias: When there is no external voltage applied to the p-n junction diode.
- Forward bias: P-type is connected to positive terminal of the voltage potential while n-type is connected to the negative terminal.
- Reverse bias: P-type is connected to negative terminal of the voltage potential while n-type is connected to the positive terminal.