Question

At room temperature, the energy band gap of different materials have been listed in the table below. Correctly match the energy band gap (List-I) with the corresponding material (List-II). 

LIST-I (Energy band gap)	LIST-II (Material)
A. \( E_g = 0.67 \) eV	I. Polymer
B. \( E_g = 1.1 \) eV	II. Germanium
C. \( E_g = 1.43 \) eV	III. Silicon
D. \( E_g > 5 \) eV	IV. Gallium Arsenide

• A. A - IV, B - II, C - III, D - I
• B. A - II, B - III, C - IV, D - I
• C. A - I, B - II, C - IV, D - III
• D. A - III, B - IV, C - I, D - II

Hint:

It is very helpful to remember the approximate room-temperature band gaps of the three most important semiconductors: Ge (\(\approx 0.7\) eV), Si (\(\approx 1.1\) eV), and GaAs (\(\approx 1.4\) eV). Remember that insulators have very wide band gaps (\(> 5\) eV).

Answer 1

The Correct Option is B

Step 1: Recall the standard room temperature band gap values for common semiconductors and materials. These are fundamental properties of materials used in electronics.

Germanium (Ge): Has a relatively small band gap, approximately 0.67 eV.
Silicon (Si): The most common semiconductor, has a band gap of approximately 1.12 eV.
Gallium Arsenide (GaAs): A direct band gap semiconductor used in optoelectronics, has a band gap of approximately 1.43 eV.
Polymers/Insulators: Materials like polymers, glass (SiO\(_2\)), and diamond are insulators because they have very large band gaps, typically greater than 5 eV, making it very difficult for electrons to jump to the conduction band.

Step 2: Match the values from List-I to the materials in List-II.

A. \(E_g=0.67\) eV matches II. Germanium.
B. \(E_g=1.1\) eV is the standard approximation for III. Silicon.
C. \(E_g=1.43\) eV matches IV. Gallium Arsenide.
D. \(E_g>5\) eV is characteristic of an insulator, which matches I. Polymer.

Step 3: Formulate the correct sequence. The correct matching is A-II, B-III, C-IV, D-I. This corresponds to option (B).