The number of dopant atoms is calculated as:
\[N_D = 5 \times 10^{28} \times 10^{-6} = 5 \times 10^{22} \text{ m}^{-3}\]
For silicon, the intrinsic carrier concentration $n_i = 1.5 \times 10^{16} \text{ m}^{-3}$, and the relation $n_h = \frac{n_i^2}{n_e}$ applies:
\[n_h = \frac{(1.5 \times 10^{16})^2}{5 \times 10^{22}} \approx 4.5 \times 10^{19} \text{ m}^{-3}\]