In an intrinsic semiconductor, the number of charge carriers is governed by the energy gap and the thermal excitation of electrons. As temperature increases, more electrons gain enough energy to jump from the valence band to the conduction band, causing conductivity to increase.
Pressure also affects the bandgap: increasing pressure generally reduces the bandgap for intrinsic semiconductors such as Si or Ge. A smaller bandgap means electrons require less energy to transition into the conduction band, resulting in increased electrical conductivity.
Therefore, both increasing temperature and increasing pressure enhance the electrical conductivity of an intrinsic semiconductor, making option (A) correct.