In a p-n junction diode, understanding the effects of forward biasing is crucial. When a diode is forward biased, the following occurs:
- Barrier Height: The external voltage applied in forward biasing reduces the built-in potential barrier. This lowering of the barrier makes it easier for charge carriers to cross the junction.
- Depletion Layer Width: Forward biasing reduces the depletion layer width. As the potential barrier decreases, more charge carriers can move across the junction, thus narrowing the depletion region.
This makes the correct answer: The barrier height and the depletion layer width both decrease.