When a diode is reverse biased, the voltage applied across the diode increases the width of the depletion region, which increases the barrier height. This prevents the flow of charge carriers across the junction.
Thus, the correct answer is (E).
Let \( I = \int_{-\frac{\pi}{4}}^{\frac{\pi}{4}} \frac{\tan^2 x}{1+5^x} \, dx \). Then: