The correct statement is(C): Holes are minority carriers and pentavalent atoms are the dopants..
In an n-type silicon, the electrons are the majority carriers, while the holes are the minority carriers. An n-type semiconductor is obtained when pentavalent atoms, such as phosphorus, are doped in silicon atoms.
Assertion (A): We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically joining it to another slab of an n-type semiconductor.
Reason (R): In a p-type semiconductor, \( n_e \gg n_h \) while in an n-type semiconductor \( n_h \gg n_e \).
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.

A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
in p-n junction diode two operating regions are there:
There are three biasing conditions for p-n junction diode are as follows: