For transistor action, which of the following statements are correct:
Base, emitter and collector regions should have similar size and doping concentrations.
The base region must be very thin and lightly doped.
The emitter junction is forward biased and collector junction is reverse biased.
Both the emitter junction as well as the collector junction are forward biased.
The correct statement is (B) and (C).
For a transistor action, the junction must be lightly doped so that the base region is very thin. Also, the emitter junction must be forward-biased and collector junction should be reverse-biased.
Assuming in forward bias condition there is a voltage drop of \(0.7\) V across a silicon diode, the current through diode \(D_1\) in the circuit shown is ________ mA. (Assume all diodes in the given circuit are identical) 


For the given logic gate circuit, which of the following is the correct truth table ? 