Reverse Bias Condition:
A p-n junction diode is formed by joining a p-type semiconductor and an n-type semiconductor. In reverse bias, the positive terminal of the external battery is connected to the n-type side, and the negative terminal is connected to the p-type side. This configuration increases the width of the depletion region, which prevents current from flowing under normal conditions. The key points of its working are:
1. Reverse Bias Condition:
When a p-n junction diode is reverse biased, the applied voltage causes the electrons in the n-region to be attracted to the positive terminal of the battery, while the holes in the p-region are attracted towards the negative terminal. This increases the width of the depletion region, making it difficult for current to flow.
2. Depletion Region:
The depletion region acts as an insulator and prevents the current from flowing. In ideal conditions, no current flows in reverse bias, but a small reverse saturation current exists due to minority carriers.
3. Breakdown:
If the reverse voltage exceeds a certain threshold (the breakdown voltage), the diode undergoes avalanche breakdown or Zener breakdown, where the depletion region is destroyed, allowing a large current to flow through the diode. This is undesirable in most applications but can be used in Zener diodes for voltage regulation.