Step 1: p-n-p Transistor as a Common Emitter Amplifier.
A p-n-p transistor consists of a layer of n-type semiconductor sandwiched between two p-type semiconductors. In a common emitter amplifier configuration, the emitter of the transistor is common to both the input and output.
In this configuration:
- The input signal is applied to the base of the transistor, and the output is taken from the collector.
- The current flowing from the emitter to the collector is amplified by the transistor.
Step 2: Working of Common Emitter Amplifier.
In the common emitter amplifier:
- A small input current applied to the base controls a much larger current flowing from the emitter to the collector.
- The transistor operates in the active region, where the base-emitter junction is forward biased and the collector-base junction is reverse biased.
- The output signal is inverted, meaning that there is a phase shift of 180° between the input and output signals.
Step 3: Gains in the Amplifier.
The two main types of gains in the common emitter amplifier are:
1. **Current Gain**: The current gain \( \beta \) of the transistor is the ratio of the collector current to the base current:
\[
\beta = \frac{I_C}{I_B}
\]
where:
- \( I_C \) is the collector current,
- \( I_B \) is the base current.
2. **Voltage Gain**: The voltage gain \( A_v \) of the amplifier is the ratio of the change in output voltage to the change in input voltage:
\[
A_v = \frac{\Delta V_{\text{out}}}{\Delta V_{\text{in}}}
\]
The voltage gain depends on the load resistance and the transistor's characteristics.
Step 4: Conclusion.
A p-n-p transistor in a common emitter configuration is widely used for amplification purposes, and its performance is characterized by both current and voltage gains.