Step 1: In metals, as the temperature increases, the atomic vibrations increase, which leads to more collisions between free electrons and atoms. This causes the electrical resistance (and thus conductivity) to decrease with increasing temperature.
Step 2: In semiconductors, the conductivity increases with temperature as more charge carriers are thermally excited.
Step 3: Silicon is an indirect band gap semiconductor, and Gallium Arsenide (GaAs) is a direct band gap semiconductor. Thus, options (A), (C), and (D) are incorrect.
Thus, the correct answer is (B).
The figure shows an opamp circuit with a 5.1 V Zener diode in the feedback loop. The opamp runs from \( \pm 15 \, {V} \) supplies. If a \( +1 \, {V} \) signal is applied at the input, the output voltage (rounded off to one decimal place) is:
A wheel of mass \( 4M \) and radius \( R \) is made of a thin uniform distribution of mass \( 3M \) at the rim and a point mass \( M \) at the center. The spokes of the wheel are massless. The center of mass of the wheel is connected to a horizontal massless rod of length \( 2R \), with one end fixed at \( O \), as shown in the figure. The wheel rolls without slipping on horizontal ground with angular speed \( \Omega \). If \( \vec{L} \) is the total angular momentum of the wheel about \( O \), then the magnitude \( \left| \frac{d\vec{L}}{dt} \right| = N(MR^2 \Omega^2) \). The value of \( N \) (in integer) is:
In the transistor circuit shown in the figure, \( V_{BE} = 0.7 \, {V} \) and \( \beta_{DC} = 400 \). The value of the base current in \( \mu A \) (rounded off to one decimal place) is: